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  • GaSSe 硒化硫鎵晶體

    The only commercially available GaSSe alloys: Bulk Gallium sulfide selenide alloys exhibit band gaps ranging from 2.0 eV (GaSe) t0 2.6 eV (GaS) mostly covering the UV band gap ranges. Crystals are per

    更新時(shí)間:2024-06-03
    產(chǎn)品價(jià)格:8678.15
    廠(chǎng)商性質(zhì):生產(chǎn)廠(chǎng)家
    訪(fǎng)問(wèn)次數(shù):667
  • n-type WSe2 crystals N型二硒化鎢晶體

    14 years of growth optimization lead to our flawless n-type WSe2 crystals through Au or Re doping: They are simply treated as gold standards in 2D materials field.

    更新時(shí)間:2024-06-03
    產(chǎn)品價(jià)格:8019.05
    廠(chǎng)商性質(zhì):生產(chǎn)廠(chǎng)家
    訪(fǎng)問(wèn)次數(shù):687
  • WSSe 硒化硫鎢晶體

    Our WSSe alloys with the chemical formula WS2xSe2(1-x) crystals perfectly crystallize in 2H phase and come at different alloy ratios x.

    更新時(shí)間:2024-06-03
    產(chǎn)品價(jià)格:7579.65
    廠(chǎng)商性質(zhì):生產(chǎn)廠(chǎng)家
    訪(fǎng)問(wèn)次數(shù):628
  • ZrSe2 二硒化鋯晶體 2

    ZrSe2 belongs to group-IV TMDCs family and adopts a stable 2H-hexagonal structure. ZrSe2 is 0.95 eV indirect gap semiconductor in the bulk form.

    更新時(shí)間:2024-06-03
    產(chǎn)品價(jià)格:7579.65
    廠(chǎng)商性質(zhì):生產(chǎn)廠(chǎng)家
    訪(fǎng)問(wèn)次數(shù):618
  • TlGaSe2 硒化鎵Tuo晶體

    The only commercially available TlGaSe2 vdW crystals have been synthesized at our facilities through float zone technique. TlGaSe2 semiconductors belong to the thallium chalcogenides family with the

    更新時(shí)間:2024-06-03
    產(chǎn)品價(jià)格:7579.65
    廠(chǎng)商性質(zhì):生產(chǎn)廠(chǎng)家
    訪(fǎng)問(wèn)次數(shù):676
  • PdSe2 crystals 二硒化鈀晶體

    Bulk PdSe2 (palladium diselenide) has been predicted to exhivit 30 meV band gap which increases to 1.43 eV indirect gap (theoretical).

    更新時(shí)間:2024-06-03
    產(chǎn)品價(jià)格:8128.9
    廠(chǎng)商性質(zhì):生產(chǎn)廠(chǎng)家
    訪(fǎng)問(wèn)次數(shù):672
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