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  • MoS2 大尺寸二硫化鉬晶體

    Natural MoS2 is an indirect gap semiconductor (1.2 eV) but becomes highly luminescent in the monolayer from at 1.9 eV (quasi-particle / optical band gap).

    更新時(shí)間:2024-06-02
    產(chǎn)品價(jià)格:3405.35
    廠商性質(zhì):生產(chǎn)廠家
    訪問次數(shù):621
  • 天然二硫化鎢晶體

    Tungsten disulfide (2H-WS2) crystals are extremely rare in nature and are less than 10 microns in the quartz / MoS? matrix.

    更新時(shí)間:2024-06-02
    產(chǎn)品價(jià)格:13401.7
    廠商性質(zhì):生產(chǎn)廠家
    訪問次數(shù):604
  • N型二硫化鉬晶體

    Years of growth optimization lead to our flawless n-type MoS2 crystals through Au or Re doping: They are simply treated as gold standards in 2D materials field.

    更新時(shí)間:2024-06-02
    產(chǎn)品價(jià)格:6700.85
    廠商性質(zhì):生產(chǎn)廠家
    訪問次數(shù):657
  • ZrS2 二硫化鋯晶體 1

    Zirconium disulfide (ZrS?) is an indirect gap layered semiconductor in the bulk and becomes direct gap semiconductor in monolayer form.

    更新時(shí)間:2024-06-02
    產(chǎn)品價(jià)格:7469.8
    廠商性質(zhì):生產(chǎn)廠家
    訪問次數(shù):681
  • P型二硫化鉬晶體

    More than a decade of growth optimization in chemical vapor transport (CVT) as well as flux growth lead to our flawless MoS2 crystals.

    更新時(shí)間:2024-06-02
    產(chǎn)品價(jià)格:6700.85
    廠商性質(zhì):生產(chǎn)廠家
    訪問次數(shù):689
  • 三硫化鈦晶體

    Anisotropic transition metal trichalcogenide material TiS3 is available at 2Dsemiconductors USA. TiS3 is a layered material like MoS2 and other layered systems.

    更新時(shí)間:2024-06-02
    產(chǎn)品價(jià)格:7030.4
    廠商性質(zhì):生產(chǎn)廠家
    訪問次數(shù):642
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